The SiC coating prepared by CVD method has the characteristics of high density and purity. At the same time, due to the low preparation temperature, it can effectively avoid the damage of the CFC matrix.

The poor interfacial bonding between CVD-SIC coating and CFC matrix makes the coating easy to flake off in high and low temperature alternating environment, which affects its oxidation resistance.

Compared with the CVD method, the embedding method has the advantages of simple process and strong interface bonding between coating and CFC matrix.

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